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KSD1691
KSD1691
Feature
* Low Collector-Emtter Saturation Voltage & Large Collector Current * High Power Dissipation: PC = 1.3W (Ta=25C) * Complementary to KSB1151
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 60 60 7 5 8 1 1.3 20 150 - 55 ~ 150 Units V V V A A A W W C C
* PW10ms, duty Cycle50%
Electrical Characteristics TC=25C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain Test Condition VCB = 50V, IE = 0 VEB = 7V, IC = 0 VCE = 1V, IC = 0.1A VCE = 1V, IC = 2A VCE = 1V, IC = 5A IC = 2A, IB = 0.2A IC = 2A, IB = 0.2A VCC = 10V, IC = 2A IB1 = - IB2 = 0.2A RL = 5 60 100 50 0.1 0.9 0.2 1.1 0.2 Min. Typ. Max. 10 10 400 0.3 1.2 1 2.5 1 V V s s s Units A A
*Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time
* Pulse test: PW50s, duty Cycle2% Pulsed
hFE Classificntion
Classification hFE 2 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1691
Typical Characteristics
10
1000
Ic[A], COLLECTOR CURRENT
IB = 20 IB = 0mA 15 0m A
8
IB = 80mA
IB = 60mA
hFE, DC CURRENT GAIN
00m IB = 1
A
VCE = 2V
100
V CE = 1V
6
0 mA IB = 4 = 30mA IB
4
IB = 20mA
10
IB = 10mA
2
IB = 0
0 0.4 0.8 1.2 1.6 2.0
1 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
10
Ic = 10 IB
Ic(Pulse)MAX
2m S
IC[A], COLLECTOR CURRENT
Ic(DC)MAX
10 S m
D is
20
m S Li 0m o n ti
pa si
1
V BE(sat)
ite
1
d
b s/
0.1
0.01 0.1 1 10
0.1 1 10
VCEO(MAX)
100
ite m Li d
V
CE
(s a
t)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
10
160
140
IC[A], COLLECTOR CURRENT
8 120
dT[%], Ic DERATING
100
6
80
s/b
DI
LIM
4
60
ITE D
TI O
VCEO(SUS)
SS IP A
40
2
N
LI
20
M IT ED
0 20 40 60 80 100
0 0 25 50
o
75
100
125
150
175
200
V CE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Reverse Bias Safe Operating Area
Figure 6. Derating Curve of Safe Operating Areas
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1691
Typical Characteristics (Continued)
30
25
PC[W], POWER DISSIPATION
20
15
10
5
0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1691
Package Demensions
TO-126
0.10
3.90
8.00 0.30
3.25 0.20
14.20MAX
o3.20 0.10
11.00
0.20
(1.00) 0.75 0.10 1.60 0.10 0.75 0.10
0.30
(0.50) 1.75 0.20
#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]
13.06
16.10
0.20
0.50 -0.05
+0.10
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E

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